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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Compared to traditional transistors, NTHS4101PT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

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NTHS4101PT1G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SMD-8
Voltage Rating (DC)	-20.0 V
Current Rating	-4.80 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.021 Ω
Polarity	P-Channel
Power Dissipation	1.3 W
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	6.70 A, -4.80 A
Rise Time	28 ns
Input Capacitance (Ciss)	2100pF @16V(Vds)
Input Power (Max)	1.3 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.3W (Ta)
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Size-Length	3.1 mm
Size-Width	1.7 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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