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SCT2H12NZGC11 - ROHM Semiconductor
Manufacturer:
ROHM Semiconductor
ManyChip's Part#:
MC11182348
Category:
MOSFET, MOSFET Transistor
Package:
TO-3
Datasheet:
Datasheet 3D Model
Description:
Silicon Carbide Power MOSFET, N Channel, 3.7A, 1.7kV, 1.15Ω, 18V, 2.8V
Stock Locations:
Availability:
3,621 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 5.9

Updated at 31/10/2025 10:30:15(UTC+8)

Certifications

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Description

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SCT2H12NZGC11 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.15 Ω
Polarity	N-Channel
Power Dissipation	35 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	1.7 kV
Breakdown Voltage (Drain to Source)	1700 V
Rise Time	21 ns
Input Capacitance (Ciss)	184pF @800V(Vds)
Fall Time	74 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	35W (Tc)
	Show
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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