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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The SPB17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.
New revolutionary high voltage technology
Extreme dV/dt rated
High peak current capability
Qualified according to JEDEC for target applications
Ultra low effective capacitance
Low specific ON-state resistance
Very low energy storage in output capacitance (Eoss)@400V
Field proven CoolMOS™ quality

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SPB17N80C3ATMA1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	800 V
Current Rating	17.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	N-Channel
Power Dissipation	227 W
Threshold Voltage	3 V
Input Capacitance	2300 pF
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	17.0 A
Rise Time	15 ns
Input Capacitance (Ciss)	2300pF @100V(Vds)
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	227000 mW
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
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The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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