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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

Don"t be afraid to step up the amps in your device when using this STGD8NC60KDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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STGD8NC60KDT4 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	62 W
Input Capacitance	380 pF
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	23.5 ns
Input Power (Max)	62 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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SN:H2.32901LO30448V44Q0QC0S1

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