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FQP4N90C - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC8743968
Category:
MOSFET, MOSFET Transistor
Package:
TO-220-3
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR FQP4N90C Power MOSFET, N Channel, 4A, 900V, 3.5Ω, 10V, 5V
Stock Locations:
Availability:
10,873 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 1.37

Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The FQP4N90C is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Low gate charge (17nC)
Low Crss (5.6pF)
100% avalanche tested

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FQP4N90C Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	900 V
Current Rating	4.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.5 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	900 V
Breakdown Voltage (Drain to Source)	900 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	50 ns
Input Capacitance (Ciss)	960pF @25V(Vds)
Input Power (Max)	140 W
Fall Time	35 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
	Show
Size-Length	9.9 mm
Size-Width	4.5 mm
Size-Height	9.2 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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