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IKW40N120H3 - Infineon
Manufacturer:
Infineon
ManyChip's Part#:
MC829765
Category:
IGBT Transistor, IGBT Module
Package:
TO-247-3
Datasheet:
Datasheet 3D Model
Description:
INFINEON IKW40N120H3 IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247, 3Pins
Stock Locations:
Availability:
2,803 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 3.08

Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Short circuit capability
Excellent performance
Low switching and conduction losses

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IKW40N120H3 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	483 W
Number of Positions	3 Position
Power Dissipation	483 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	355 ns
Input Power (Max)	483 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	483 W
	Show
Size-Length	16.03 mm
Size-Width	5.16 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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