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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The IRF840PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.

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IRF840PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	8.00 A
Power Rating	125 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.85 Ω
Polarity	N-Channel
Power Dissipation	125 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	8.00 A
Rise Time	23 ns
Input Capacitance (Ciss)	1300pF @25V(Vds)
Input Power (Max)	125 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
HK STC License	NLR

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