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Updated at 31/10/2025 10:30:15(UTC+8)

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Description

The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Dynamic dV/dt rating
Fast switching
150°C Operating temperature
Easy to parallel
Simple drive requirement

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IRF9610PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-200 V
Current Rating	-1.80 A
Power Rating	20 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3 Ω
Polarity	P-Channel
Power Dissipation	2 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	-200 V
Continuous Drain Current (Ids)	-1.80 A
Rise Time	15.0 ns
Input Capacitance (Ciss)	170pF @25V(Vds)
Input Power (Max)	20 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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