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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The IRFP360LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for faster switching speeds and increased total system savings. This device improvement combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors.
Reduced gate drive requirement
30V VGS Enhanced rating
Reduced CISS, COSS, CRSS
Dynamic dV/dt rating
Repetitive avalanche rated

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IRFP360LCPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	280 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	N-Channel
Power Dissipation	280 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	400 V
Continuous Drain Current (Ids)	23.0 A
Input Capacitance (Ciss)	3400pF @25V(Vds)
Input Power (Max)	280 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	280 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	500
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
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