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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRFP4229PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Advanced process technology
Low EPULSE rating to reduce power dissipation
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability

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IRFP4229PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	310 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.038 Ω
Polarity	N-Channel
Power Dissipation	310 W
Threshold Voltage	5 V
Input Capacitance	4560 pF
Drain to Source Voltage (Vds)	250 V
Continuous Drain Current (Ids)	44A
Rise Time	27 ns
Input Capacitance (Ciss)	4560pF @25V(Vds)
Input Power (Max)	310 W
Fall Time	19 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	310W (Tc)
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Size-Length	15.87 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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