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IRLL110PBF - Vishay Semiconductor
Manufacturer:
Vishay Semiconductor
ManyChip's Part#:
MC66681926
Category:
MOSFET, MOSFET Transistor
Package:
SOT-223
Datasheet:
Datasheet 3D Model
Description:
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1.5A; SOT-223; PD 3.1W; VGS +/-10V
Stock Locations:
Availability:
327 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 0.46

Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

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Description

The IRLL110PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
RDS (ON) Specified at VGS = 4 and 5V
Surface-mount

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IRLL110PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-223
Voltage Rating (DC)	100 V
Current Rating	1.50 A
Power Rating	3.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	540 mΩ
Polarity	N-Channel
Power Dissipation	3.1 W
Threshold Voltage	2 V
Input Capacitance	250pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	1.50 A
Rise Time	47 ns
Input Capacitance (Ciss)	250pF @25V(Vds)
Fall Time	18 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
	Show
Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.45 mm
Operating Temperature	-55℃ ~ 150℃
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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