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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.
FEATURES
Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
APPLICATIONS
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers

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MAT01AHZ Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	6 Pin
Case/Package	TO-78-6
Frequency	450 MHz
Number of Circuits	2 Circuit
Number of Positions	6 Position
Polarity	NPN
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.025A
hFE Min	500
hFE Max	840
Input Power (Max)	500 mW
DC Current Gain (hFE)	500
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	4.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20

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