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NDS352AP - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC9390860
Category:
MOSFET, MOSFET Transistor
Package:
SOT-23-3
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR NDS352AP MOSFET Transistor, P Channel, 900mA, -30V, 0.25Ω, -10V, -1.7V
Stock Locations:
Availability:
229 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 0.33

Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability

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NDS352AP Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	-30.0 V
Current Rating	-900 mA
Power Rating	500 mW
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	P-Channel
Power Dissipation	500 mW
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	-30.0 V
Continuous Drain Current (Ids)	900 mA
Input Capacitance (Ciss)	135pF @15V(Vds)
Input Power (Max)	460 mW
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500mW (Ta)
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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