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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The PBSS5350Z is a PNP low VCEsat Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
Low collector-emitter saturation voltage
High collector current capabilities are IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat generation
Reduced PCB area requirements compared to DPAK
NPN complement is PBSS4350Z
PB5350 Marking code

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PBSS5350Z Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	1.35 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	3A
hFE Min	100
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2 W
	Show
Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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