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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The RFD14N05L from Fairchild is a through hole, 50V N channel logic level power MSOFET in TO-251AA package. Transistor is produced using megaFETprocess uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance MOSFET has an special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Typical applications are switching regulators, switching converters, motor drivers and relay drivers.
Temperature compensating PSPICE model
Driven directly from CMOS, NMOS and TTL circuits
Drain to source voltage (Vds) of 50V
Gate to source voltage of ±10V
Continuous drain current (Id) of 14A
Power dissipation (Pd) of 48W
Low on state resistance of 100mohm at Vgs 5V
Operating temperature range -55°C to 175°C

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RFD14N05L Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Power Dissipation	48 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	50 V
Rise Time	24 ns
Input Capacitance (Ciss)	670pF @25V(Vds)
Input Power (Max)	48 W
Fall Time	16 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48 W
	Show
Size-Length	6.8 mm
Size-Width	2.5 mm
Size-Height	6.3 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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