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Updated at 17/06/2025 10:30:15(UTC+8)

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ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

The SPW20N60S5 is a 600V N-channel CoolMOS™ Power MOSFET with innovative high voltage technology. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
Worldwide best RDS (ON) in TO-251 and TO-252
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance

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SPW20N60S5 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	650 V
Current Rating	20.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.19 Ω
Polarity	N-Channel
Power Dissipation	208 W
Threshold Voltage	4.5 V
Input Capacitance	3.00 nF
Gate Charge	103 nC
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	20.0 A
Rise Time	25 ns
Input Capacitance (Ciss)	3000pF @25V(Vds)
Input Power (Max)	208 W
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	208 W
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.95 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended for New Design
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

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