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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

2.5V Drive Nch+Nch MOS FET
Features
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
Structure
Silicon N-channel MOS FET
Applications
Interfacing, switching (30V, 100mA)

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UM6K1NTN Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	30.0 V
Current Rating	100 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	8 Ω
Polarity	Dual N-Channel
Power Dissipation	150 mW
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Continuous Drain Current (Ids)	100 mA
Rise Time	35 ns
Input Capacitance (Ciss)	13pF @5V(Vds)
Input Power (Max)	150 mW
Fall Time	80 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
	Show
Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.9 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
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The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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