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Updated at 19/04/2026 10:30:15(UTC+8)

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Description

This APTGF75H120TG infineon IGBT module from Microsemi will handle large currents with little seepage. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 500000 mW. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a quad configuration.

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APTGF75H120TG Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	20 Pin
Case/Package	SP-4
Power Dissipation	500000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	5.1nF @25V
Input Power (Max)	500 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	500000 mW
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Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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SN:H0.9725LO102412V3Q0QC0S1

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