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Updated at 23/10/2025 10:30:15(UTC+8)

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ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

The IRG7PSH73K10PBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
Low VCE (ON) Trench IGBT technology
Low switching losses
Square RBSOA
100% of Parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
High efficiency in a wide range of applications
10µs Short-circuit SOA

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IRG7PSH73K10PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-274-3
Power Rating	1.15 kW
Number of Positions	3 Position
Power Dissipation	1.15 kW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	1150 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.15 kW
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Size-Length	16.1 mm
Size-Width	5.5 mm
Size-Height	20.8 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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