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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
• These are Pb−Free Devices

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NGP15N41CLG Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	410 V
Current Rating	15.0 A
Number of Positions	3 Position
Power Dissipation	107 W
Rise Time	4.00 ns
Breakdown Voltage (Collector to Emitter)	440 V
Input Power (Max)	107 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	107000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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SN:H1.604LO26221V41Q0QC0S0

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