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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
Very tight variation of on-resistance vs. temperature
Slight variation of switching losses vs. temperature
Very high operating temperature capability (200°C)
Very fast and robust intrinsic body diode
Low capacitance

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SCT30N120 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.08 Ω
Polarity	N-Channel
Power Dissipation	270 W
Threshold Voltage	2.6 V
Input Capacitance	1700 pF
Drain to Source Voltage (Vds)	1200 V
Rise Time	20 ns
Input Capacitance (Ciss)	1700pF @400V(Vds)
Input Power (Max)	270 W
Fall Time	28 ns
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	270W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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