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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

Add switching and amplifying capabilities to your electronic circuit with this NPN ZXTN25100BFHTA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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ZXTN25100BFHTA Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	160 MHz
Voltage Rating (DC)	100 V
Current Rating	3.00 A
Power Rating	1.25 W
Polarity	NPN
Power Dissipation	1810 mW
Rise Time	55 ns
Gain Bandwidth Product	160 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	3A
hFE Min	100 @10mA, 2V
Input Power (Max)	1.25 W
Fall Time	95 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1810 mW
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Size-Length	3.05 mm
Size-Width	1.4 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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charges, duties and taxes.
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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
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- Decapsulation control
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- XRF inspection
- Electrical testing
- Surface testing
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SN:H2.31704LO22785V57Q0QC0S0

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