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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

Microsemi has the solution to your circuit"s high-voltage requirements with their PNP 2N3637UB general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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2N3637UB Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SMD-3
Polarity	PNP
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	175 V
Continuous Collector Current	1A
hFE Min	100 @50mA, 10V
Input Power (Max)	1.5 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	3.25 mm
Size-Width	2.74 mm
Size-Height	1.8 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status
ECCN Code	EAR99

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