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Updated at 31/10/2025 10:30:15(UTC+8)

Certifications

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Description

General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Features
Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
Low gate resistance
Avalanche rated and 100% tested
RoHS Compliant
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture

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FDD8796 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Drain to Source Resistance (on) (Rds)	4.50 mΩ
Polarity	N-Channel
Power Dissipation	88 W
Drain to Source Voltage (Vds)	25 V
Breakdown Voltage (Drain to Source)	25.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	35.0 A
Rise Time	24 ns
Input Capacitance (Ciss)	2610pF @13V(Vds)
Input Power (Max)	88 W
Fall Time	57 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	88W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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