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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The N25Q032A11EF640E is a Serial NOR Flash Memory can be writing protected by software through volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64kB for volatile protections. This is the first high-performance multiple input/output serial flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for read and program operations. The memory is organized as 64kB main sectors that are further divided into 16 subsectors each. The memory can be erased one 4kB subsector at a time, 64kB sectors at a time or as a whole.
Dual/quad I/O instruction provides increased throughput up to 432MHz
Program/erase suspend operations
Minimum 100000 erase cycles per sector
More than 20 years data retention

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N25Q032A11EF640E Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	DFN-8
Supply Voltage (DC)	1.70V (min)
Supply Current	20 mA
Number of Positions	8 Position
Clock Speed	108 MHz
Number of Bits	8 Bit
Memory Size	4000000 B
Access Time(Max)	7 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	1.7V ~ 2V
Supply Voltage (Max)	2 V
Supply Voltage (Min)	1.7 V
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Size-Length	6 mm
Size-Width	5 mm
Size-Height	0.85 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
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SN:H2.16528LO40167V41Q0QC0S0

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