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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications.
Low threshold voltage
Low ON-state resistance
Enhanced power dissipation capability of 890mW
AEC-Q101 qualified
-55 to 150°C Junction temperature range

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BSH205G2R Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.12 Ω
Power Dissipation	0.89 W
Threshold Voltage	950 mV
Input Capacitance	418 pF
Drain to Source Voltage (Vds)	20 V
Rise Time	14 ns
Input Capacitance (Ciss)	418pF @10V(Vds)
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	480mW (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
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