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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The IRF5805TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It is ideal for applications where printed circuit board space is at a premium. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%. It is ideal for DC switches and load switch.
Low gate charge
Halogen-free

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IRF5805TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Power Rating	2 W
Number of Channels	1 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.098 Ω
Polarity	P-Channel
Power Dissipation	2 W
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	3.8A
Rise Time	14 ns
Input Capacitance (Ciss)	511pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	49 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	3 mm
Size-Width	1.5 mm
Size-Height	0.9 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

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- Vacuum packaging
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- Shockproof foam
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SN:H2.82649LO24674V35Q0QC0S0

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